Deposition of metal films based upon complementary reactions

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United States of America Patent

PATENT NO 9540730
APP PUB NO 20150247240A1
SERIAL NO

14430282

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Abstract

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A method comprises contacting a compound having formulae (1) with a compound having formula MLo to form a metal:

description='In-line Formulae' end='lead'[M(SiR3)m(L1)p]n  (1)description='In-line Formulae' end='tail'

wherein

    M is Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Al, a second row transition metal or a third row transition metal;R are each independently H, C1-C6 alkyl or —Si(R″)3;R″ are each independently H or C1-C6 alkyl;m is an integer from 1 to 3;n is a number representing the formation of aggregates or polymeric material;L1 is a neutral donor ligand;L is a ligand;p is an integer from 0 to 6; ando is an integer representing the number of ligands bonded to MLo.

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Patent Owner(s)

Patent OwnerAddress
WAYNE STATE UNIVERSITY5057 WOODWARD SUITE 6306 DETROIT MI 48202

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Winter, Charles H Bloomfield Hills, US 47 1516

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