RF CYCLE PURGING TO REDUCE SURFACE ROUGHNESS IN METAL OXIDE AND METAL NITRIDE FILMS
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United States of America Patent
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Issued Date -
Sep 3, 2015
app pub date -
Mar 3, 2014
filing date -
Mar 3, 2014
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Abstract
Methods of reducing particles in semiconductor substrate processing are provided herein. Methods involve performing a precursor-free radio frequency cycle purge without a substrate in the process chamber by introducing a gas without a precursor into the process chamber through the showerhead and igniting a plasma one or more times after a film is deposited on the substrate by introducing a vaporized liquid precursor to the process chamber.
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