Method of cleaning plasma processing apparatus
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United States of America Patent
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Aug 21, 2018
Grant Date -
Sep 3, 2015
app pub date -
Mar 2, 2015
filing date -
Mar 3, 2014
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Abstract
There is provided a cleaning method for removing a first deposit, formed on an upper electrode through an etching of a metal layer containing a metal, by using a plasma generated between a lower electrode of a lower structure and the upper electrode in a processing chamber of a plasma processing apparatus. The method includes a step of colliding ions with the first deposit formed on the upper electrode and a step of removing a second deposit, which is generated by said colliding and formed on the lower structure. Further, a cycle including the step of colliding and the step of removing is repeated multiple times.
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