Tuning the Piezoelectric Coefficient of a Doped Piezoelectric Material Using Multiple Noble Gases
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United States of America Patent
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Issued Date -
Sep 3, 2015
app pub date -
Feb 28, 2014
filing date -
Feb 28, 2014
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Abstract
A process chamber is provided. A target comprising an alloy comprising a base metal atomic species and an alloy atomic species is placed in the process chamber. The concentration of the alloy atomic species is subject to a manufacturing variation. A substrate is placed in the process chamber. While supplying gases comprising a noble gas of a first atomic species and a noble gas of a second atomic species, different from the first atomic species, to the process chamber, a sputtering operation is performed to transfer target material from the target to the substrate to form a piezoelectric film. A relative flow rate is set between the noble gas of the first atomic species and the noble gas of the second atomic species to form the film with a predetermined piezoelectric coefficient notwithstanding the manufacturing variation.
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