ETCHING LIQUID FOR SEMICONDUCTOR SUBSTRATE, ETCHING METHOD USING THE SAME, AND METHOD OF PRODUCING SEMICONDUCTOR DEVICE
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
N/A
app pub date -
May 15, 2015
filing date -
Nov 16, 2012
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
An etching liquid that processes a substrate having a first layer containing titanium nitride (TiN) and a second layer containing a transition metal and thereby removes selectively the first layer, wherein the etching liquid contains a fluorine-containing compound, an oxidizing agent and an organic silicon compound.
First Claim
Family
International Classification(s)
- [Classification Symbol]
- [Patents Count]
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully