Cobalt precursors for low temperature ALD or CVD of cobalt-based thin films
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United States of America Patent
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Jan 10, 2017
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Sep 24, 2013
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Sep 25, 2012
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Abstract
Cobalt silylamide and cobalt carbonyl precursors are described, which are usefully employed in vapor deposition processes, such as chemical vapor deposition and atomic layer deposition, to deposit cobalt and to form high purity cobalt-containing films at temperatures below 400° C. These precursors and processes can be utilized in the manufacture of integrated circuitry and production of devices such as microprocessors, and logic and memory chips.
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