INFRARED SENSOR DESIGN USING AN EPOXY FILM AS AN INFRARED ABSORPTION LAYER
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United States of America Patent
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app pub date -
May 14, 2015
filing date -
Mar 4, 2011
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Abstract
A MEMS IR sensor, with a cavity in a substrate underlapping an overlying layer and a temperature sensing component disposed in the overlying layer over the cavity, may be formed by forming an IR-absorbing sealing layer on the overlying layer so as to cover access holes to the cavity. The sealing layer is may include a photosensitive material, and the sealing layer may be patterned using a photolithographic process to form an IR-absorbing seal. Alternately, the sealing layer may be patterned using a mask and etch process to form the IR-absorbing seal.
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