MEMS integrated pressure sensor devices and methods of forming same
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United States of America Patent
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Feb 16, 2016
Grant Date -
Sep 3, 2015
app pub date -
May 15, 2015
filing date -
Mar 14, 2013
priority date (Note) -
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status (Latency Note)
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Abstract
A method embodiment includes providing a micro-electromechanical (MEMS) wafer including a polysilicon layer having a first and a second portion. A carrier wafer is bonded to a first surface of the MEMS wafer. Bonding the carrier wafer creates a first cavity. A first surface of the first portion of the polysilicon layer is exposed to a pressure level of the first cavity. A cap wafer is bonded to a second surface of the MEMS wafer opposite the first surface of the MEMS wafer. The bonding the cap wafer creates a second cavity comprising the second portion of the polysilicon layer and a third cavity. A second surface of the first portion of the polysilicon layer is exposed to a pressure level of the third cavity. The first cavity or the third cavity is exposed to an ambient environment.
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International Classification(s)
- H01L:SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICE....
- G01L:MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL ....
- B81C:PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE M....
- B81B:MICRO-STRUCTURAL DEVICES OR SYSTEMS, e.g. MICRO-ME....
- G01P:MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, D....
- G01C:MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING....
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