Near-field exposure mask, resist pattern forming method, device manufacturing method, near-field exposure method, pattern forming method, near-field optical lithography member, and near-field nanoimprint method
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United States of America Patent
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Jan 24, 2017
Grant Date -
Sep 3, 2015
app pub date -
Apr 10, 2015
filing date -
Mar 9, 2011
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Abstract
A near-field exposure mask according to an embodiment includes: a silicon substrate; and a near-field light generating unit that is formed on the silicon substrate, the near-field light generating unit being a layer containing at least one element selected from the group consisting of Au, Al, Ag, Cu, Cr, Sb, W, Ni, In, Ge, Sn, Pb, Zn, Pd, and C, or a film stack formed with layers made of some of those materials.
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