Bulk acoustic wave resonator having doped piezoelectric layer
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United States of America Patent
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Sep 27, 2016
Grant Date -
Aug 27, 2015
app pub date -
Feb 27, 2014
filing date -
Feb 27, 2014
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Abstract
In accordance with a representative embodiment, a bulk acoustic wave (BAW) resonator comprises: a first electrode having a first electrode thickness; a second electrode having a second electrode thickness; and a piezoelectric layer having a piezoelectric layer thickness and being disposed between the first and second electrodes, the piezoelectric layer comprising a piezoelectric material doped with at least one rare earth element. For a particular acoustic coupling coefficient (kt2) value and a series resonance frequency (Fs) of the BAW resonator, the first electrode thickness and the second electrode thickness are each greater than a thickness of a first electrode and a thickness of a second electrode of a BAW resonator comprising an undoped piezoelectric layer.
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