NBT-BT crystal piezoelectric film and piezoelectric stacking structure comprising the same
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United States of America Patent
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Nov 1, 2016
Grant Date -
Aug 27, 2015
app pub date -
Jul 2, 2014
filing date -
Feb 26, 2014
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Abstract
The present invention provides an NBT-BT film having a higher polarization-disappearance temperature. The present invention is a [(Na,Bi)1-xBax]TiO3 crystal piezoelectric film. The [(Na,Bi)1-xBax]TiO3 crystal piezoelectric film has a (001) orientation only. The [(Na,Bi)1-xBax]TiO3 crystal piezoelectric film has a-axis length of not less than 0.390 nanometers and not more than 0.395 nanometers. The [(Na,Bi)1-xBax]TiO3 crystal piezoelectric film has c-axis length of not less than 0.399 nanometers and not more than 0.423 nanometers (where x represents a value of not less than 0 and not more than 1). The [(Na,Bi)1-xBax]TiO3 crystal piezoelectric film has a polarization-disappearance temperature of not less than 389 degrees Celsius.
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