METHOD FOR MANUFACTURING A SEMICONDUCTOR STRUCTURE
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United States of America Patent
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Aug 27, 2015
app pub date -
Oct 23, 2012
filing date -
Sep 25, 2012
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Abstract
The present invention discloses a method for manufacturing a semiconductor structure, which comprises the following steps: a) providing an SOI substrate, a shallow trench is formed on the SOI substrate, with the defined area of the shallow trench corresponding to the active region; b) forming the heavily doped layer on the shallow trench sidewall close to the active region; c) filling the shallow trench to form the shallow trench isolation structure; d) forming the semiconductor device in the active region. In the present disclosure, PN junctions are formed in the source electrode and the body region of the SOI, to provide a discharge channel for the charge accumulated in the body region, to reduce the impact of the floating body effect, and to improve the reliability of the device.
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