Pseudo-substrate with improved efficiency of usage of single crystal material
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United States of America Patent
Stats
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Feb 2, 2021
Grant Date -
Aug 27, 2015
app pub date -
Sep 6, 2013
filing date -
Sep 4, 2012
priority date (Note) -
In Force
status (Latency Note)
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Abstract
The invention relates to a method for fabricating a pseudo-substrate comprising the steps of providing a single crystal ingot, providing a handle substrate, cutting a thin slice from the single crystal ingot, and attaching the thin slice to the handle substrate to form a pseudo-substrate. According to the invention, the thickness of the thin slice is substantially equal or inferior to a critical thickness below which the slice, if taken alone, is no longer mechanically stable. The invention further relates to a semiconductor structure.
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Family
Country | kind | publication No. | Filing Date | Type | Sub-Type |
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- 15 United States
- 10 France
- 8 Japan
- 7 China
- 5 Korea
- 2 Other
Patent Owner(s)
- SOITEC
International Classification(s)
Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
---|---|---|---|
Kononchuk, Oleg | Grenoble, FR | 89 | 317 |
# of filed Patents : 89 Total Citations : 317 | |||
Letertre, Fabrice | Grenoble, FR | 95 | 2319 |
# of filed Patents : 95 Total Citations : 2319 |
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