Pseudo-substrate with improved efficiency of usage of single crystal material

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United States of America Patent

PATENT NO 10910256
APP PUB NO 20150243549A1
SERIAL NO

14422596

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Abstract

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The invention relates to a method for fabricating a pseudo-substrate comprising the steps of providing a single crystal ingot, providing a handle substrate, cutting a thin slice from the single crystal ingot, and attaching the thin slice to the handle substrate to form a pseudo-substrate. According to the invention, the thickness of the thin slice is substantially equal or inferior to a critical thickness below which the slice, if taken alone, is no longer mechanically stable. The invention further relates to a semiconductor structure.

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  • SOITEC

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kononchuk, Oleg Grenoble, FR 89 317
Letertre, Fabrice Grenoble, FR 95 2319

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