Control of FET Back-Channel Interface Characteristics

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United States of America Patent

APP PUB NO 20150243548A1
SERIAL NO

14192728

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Abstract

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A method and structure for control of FET back-channel interface characteristics of an integrated circuit by implanting of selected implantation species at or near a device interface accessible during manufacture of the integrated circuit using layer transfer technology, without adversely affecting the structure or characteristics of a principal front-side FET.

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Patent Owner(s)

Patent OwnerAddress
PEREGRINE SEMICONDUCTOR CORPORATION9380 CARROLL PARK DRIVE SAN DIEGO CA 92121

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cable, James S Del Mar, US 69 3339
Miscione, Anthony Mark Ramona, US 7 28

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