METHOD FOR FORMING FIN FIELD EFFECT TRANSISTOR
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United States of America Patent
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Issued Date -
Aug 27, 2015
app pub date -
Mar 21, 2014
filing date -
Feb 25, 2014
priority date (Note) -
Abandoned
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Abstract
A method for forming a FinFET is provided, comprising: providing a substrate; forming a fin structure with a material Ge or GeSi on the substrate; forming a gate stack or a dummy gate on the substrate; defining a first region and a second region in the fin structure; and implanting atoms, molecules, ions or plasmas containing an element Sn into the first region and the second region in the fin structure with the material Ge to form a strained GeSn layer, or implanting atoms, molecules, ions or plasmas containing an element Sn into the first region and the second region in the fin structure with the material GeSi to form a strained GeSnSi layer, or co-implanting atoms, molecules, ions or plasmas containing elements Sn and Si into the first region and the second region in the fin structure with the material GeSi to form a strained GeSnSi layer.
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