MONOCRYSTALLINE DIAMONDS AND METHODS OF GROWING THE SAME
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United States of America Patent
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app pub date -
Mar 9, 2015
filing date -
Jun 18, 2008
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Abstract
A monocrystalline diamond having a corrected full width at half maxima after accounting for the Rayleigh width of a 514.5 nm laser, and exhibiting: a presence or absence of negatively-charged silicon vacancy defect depending on the diamond quality; a concentration level of neutral substitutional nitrogen at an absorption coefficient of 270 nm; an FTIR transmittance value at a 10.6 μm wavelength; a concentration of positively-charged substitutional nitrogen when the peak height is at 1332.5 cm−1; an absence of nitrogen-vacancy-hydrogen defect species when the wavelength is at 3123 cm−1; normalisation of spectra when the first order Raman peak is at 552.37 nm using 514.5 nm laser excitation; either a black or white sector and having a refractive index of retardation to thickness of diamond plates; or a reddish glow and a blue glow when the diamond is placed under 355 nm laser irradiation at room temperature in the dark.
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