Semiconductor die with high pressure cavity
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United States of America Patent
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Aug 16, 2016
Grant Date -
Aug 27, 2015
app pub date -
Feb 24, 2014
filing date -
Feb 24, 2014
priority date (Note) -
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Abstract
A semiconductor die includes a device structure having a micro-electronic device located at a surface of a substrate and a cap coupled to the device structure with the micro-electronic device positioned in a cavity located between the cap and the substrate. A sacrificial material is provided within the cavity, coupling the cap to the device structure. The sacrificial material is heated in the cavity to cause the sacrificial material to decompose to a gaseous species. The presence of the gaseous species in the cavity increases a pressure level in the cavity from an initial pressure to a final pressure.
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