TOP ELECTRODE ETCH IN A MAGNETORESISTIVE DEVICE AND DEVICES MANUFACTURED USING SAME
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United States of America Patent
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Issued Date -
Aug 20, 2015
app pub date -
Jun 4, 2014
filing date -
Feb 18, 2014
priority date (Note) -
Abandoned
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Abstract
A two-step etching process is used to form the top electrode for a magnetoresistive device. The level of isotropy is different for each of the two etching steps, thereby providing advantages associated with isotropic etching as well as more anisotropic etching. The level of isotropy is controlled by varying power and pressure during plasma etching operations.
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