AMORPHOUS SILICON PASSIVATED CONTACTS FOR BACK CONTACT BACK JUNCTION SOLAR CELLS
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Aug 20, 2015
app pub date -
Dec 23, 2014
filing date -
Dec 2, 2013
priority date (Note) -
Published
status (Latency Note)
Importance
Abstract
Passivated contact structures and fabrication methods for back contact back junction solar cells are provided. According to one example embodiment, a back contact back junction photovoltaic solar cell is described that has a semiconductor light absorbing layer having a front side and a backside having base regions and emitter regions. An amorphous silicon passivating layer is positioned on the base regions. A first level base and emitter metallization contacts the emitter regions and the amorphous silicon passivating layer on the base regions. An electrically insulating backplane is positioned on the first level base and emitter metallization. A second level metallization contacts the first level base and emitter metallization through conductive vias in the electrically insulating backplane.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully