VAPOR PHASE GROWTH METHOD
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United States of America Patent
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Aug 20, 2015
app pub date -
Feb 17, 2015
filing date -
Feb 20, 2014
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Abstract
A vapor phase growth method according to embodiments uses a vapor phase growth apparatus including a reaction chamber, a transfer chamber, and a standby chamber. After a film containing gallium (Ga) is formed on a first substrate, a deposit adhering to a support is covered with a coating film or is removed. After that, an aluminum nitride film is formed successively on a plurality of substrates having a silicon (Si) surface, and the substrates are transferred into the standby chamber. Then, the substrates are transferred sequentially from the standby chamber into the reaction chamber, such that a film containing gallium (Ga) is formed successively on the substrates.
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