VAPOR PHASE GROWTH APPARATUS
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United States of America Patent
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Issued Date -
Aug 20, 2015
app pub date -
Sep 26, 2013
filing date -
Oct 4, 2012
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Abstract
Provided is a high-productivity, compact vapor phase growth apparatus 1. This vapor phase growth apparatus 1 is configured to supply a raw material gas onto a substrate 5 placed in a chamber 2 that can be vertically divided into a chamber main body 3 and a chamber cover 4 to cause a thin film to grow on the substrate 5. This vapor phase growth apparatus 1 includes a susceptor 7 formed from a circular plate that is detachably arranged on the chamber main body 3 side and is configured to hold the substrate 5, a susceptor cover 9 to be placed on the susceptor 7 so as to cover a region other than a substrate holding portion of the susceptor 7, a ceiling plate 11 that is provided separated from the susceptor 7 by a predetermined interval and faces the susceptor 7 to form a flow path of the raw material gas, and a temporary placement apparatus 21 configured to temporarily place at least one of the susceptor 7, the susceptor cover 9, and the ceiling plate 11 in a space above the chamber main body 3 formed when the chamber 2 has been divided.
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