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• 15 United States
• 10 France
• 8 Japan
• 7 China
• 5 Korea
• 2 Other

Patent Owner(s)

Patent Owner	Address
DANZER SERVICES SCHWEIZ AG	6340 BAAR

International Classification(s)

• B27B:SAWS; COMPONENTS OR ACCESSORIES THEREFOR
• B27L:REMOVING BARK OR VESTIGES OF BRANCHES

• 2015 Application Filing Year
• B27B Class
• 109 Applications Filed
• 78 Patents Issued To-Date
• 71.56 % Issued To-Date

Inventor(s)

Inventor Name	Address	# of filed Patents	Total Citations
Lacroix, Wolfgang	Lichtenstein-Unterhausen, DE	9	32
# of filed Patents : 9 Total Citations : 32
Ratstatter, Daniel J	Beaver Falls, US	1	1
# of filed Patents : 1 Total Citations : 1
Trost, Juergen F	Reutlingen, DE	10	41
# of filed Patents : 10 Total Citations : 41

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Patent Citation Ranking

• 1 Citation Count
• B27B Class

• 14.41 % this patent is cited more than
• 10 Age

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Fee	Large entity fee	small entity fee	micro entity fee	due date
11.5 Year Payment	$7400.00	$3700.00	$1850.00	Feb 20, 2027

Fee	Large entity fee	small entity fee	micro entity fee
Surcharge - 11.5 year - Late payment within 6 months	$160.00	$80.00	$40.00
Surcharge after expiration - Late payment is unavoidable	$700.00	$350.00	$175.00
Surcharge after expiration - Late payment is unintentional	$1,640.00	$820.00	$410.00

Full Text

US Patent Application No: 2015/0249,018

DIFFERENTIAL SILICON OXIDE ETCH

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Abstract

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A method of etching exposed silicon oxide on patterned heterogeneous structures is described and includes a gas phase etch created from a remote plasma etch. The remote plasma excites a fluorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents combine with water vapor. Reactants thereby produced etch the patterned heterogeneous structures to remove two separate regions of differing silicon oxide at different etch rates. The methods may be used to remove low density silicon oxide while removing less high density silicon oxide.

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Description

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Claims

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