NITRIDE SEMICONDUCTOR DEVICE
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United States of America Patent
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Issued Date -
Aug 13, 2015
app pub date -
Aug 29, 2013
filing date -
Aug 31, 2012
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Abandoned
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Abstract
Disclosed herein are a nitride semiconductor device that operates at lower operating voltage and that has higher luminous efficiency. The nitride semiconductor device according to embodiments of the present invention has an electron supply layer composed of N-type semiconductor. The electron supply layer has a composition of AlxGa1-xN (where 0.01
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