NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD FOR PRODUCING SAME
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United States of America Patent
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Issued Date -
Aug 13, 2015
app pub date -
Feb 9, 2015
filing date -
Feb 12, 2014
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Abstract
Provided are a semiconductor light-emitting element having an n-type nitride semiconductor layer capable of suppressing appearance of a crack than before, and a method for producing the same. The method includes a step (a) of forming a GaN layer on a growth substrate; a step (b) of forming a multi-layered film including a first layer of a nitride semiconductor containing In and a second layer formed of a nitride semiconductor on the GaN layer; a step (c) of forming a protective layer formed of a nitride semiconductor on the multi-layered film; and a step (d) of forming an n-type nitride semiconductor layer on the protective layer at a growth temperature higher than that in the step (b) and the step (c), wherein in the step (d), the multi-layered film is thermally decomposed to form an internal void.
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