HIGH-LUMINANCE NITRIDE LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME
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United States of America Patent
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Aug 13, 2015
app pub date -
Sep 13, 2013
filing date -
Sep 14, 2012
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Abandoned
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Abstract
Disclosed are a nitride light-emitting device having high luminance even while saving on manufacturing costs by using a silicon substrate as a growth substrate, and a method for manufacturing the same. A nitride light-emitting device according to the present invention comprises: a light-emitting structure comprising, from the top down, a first nitride semiconductor layer, an active layer, and a second nitride semiconductor layer and having a plurality of trenches from the bottom up to at least the second nitride semiconductor layer and the active layer; and a bonding substrate combined to a lower surface of the light-emitting structure, wherein a width of the light-emitting structure between the trenches is 20-300 mm.
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