III NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME
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United States of America Patent
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Issued Date -
Aug 13, 2015
app pub date -
Aug 30, 2013
filing date -
Sep 3, 2012
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Abstract
A III nitride semiconductor light emitting device achieves improved light output power while reducing forward voltage. A III nitride semiconductor light emitting device according to the present invention includes, in the following order, a p-side electrode, a p-type III nitride semiconductor layer, a light emitting layer, an n-type III nitride semiconductor layer, and a buffer layer including an undoped III nitride semiconductor layer. An exposed portion is provided on the buffer layer. An n-side electrode is provided continuously on the n-type III nitride semiconductor layer, exposed in the exposed portion, and the buffer layer. The n-side electrode includes a plurality of contact portions in contact with the n-type III nitride semiconductor layer, and the contact portions are electrically interconnected on the buffer layer.
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