Monolithically integrated CMOS and acoustic wave device
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United States of America Patent
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Issued Date -
Aug 13, 2015
app pub date -
Dec 4, 2012
filing date -
Dec 20, 2011
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Abstract
An integrated CMOS and acoustic wave device, including: an electrically insulating piezoelectric thin film having opposed first and second surfaces; one or more CMOS devices formed in a semiconductor thin film disposed on one or more portions of the first surface of the piezoelectric thin film; and at least one acoustic wave structure having electrically conductive transducer electrodes disposed on at least one of the first and second surfaces of the piezoelectric thin film.
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