SINGLE CRYSTAL PRODUCTION APPARATUS, CRUCIBLE FOR USE THEREIN, AND METHOD OF PRODUCING SINGLE CRYSTAL
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Aug 13, 2015
app pub date -
Aug 30, 2013
filing date -
Sep 4, 2012
priority date (Note) -
Published
status (Latency Note)
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Importance

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Abstract
The production apparatus is used in production of single crystals by solution growth techniques. The production apparatus includes a seed shaft, a crucible, and a drive source. The seed shaft has a lower end surface to which a seed crystal is to be attached. The crucible contains a solution from which a single crystal is made. The drive source causes the crucible to rotate, and also varies the rotational speed of the crucible. The inner peripheral surface of the crucible includes a flow control surface which defines a non-circular cross-sectional shape. This single crystal production apparatus is capable of strongly stirring the solution contained in the crucible.
First Claim
all claims..Other Claims data not available
Family
Country | kind | publication No. | Filing Date | Type | Sub-Type |
---|---|---|---|---|---|
CN | B | CN104662211 | Aug 30, 2013 | Patent | Grant |
Type : Patent Sub-Type : Grant | |||||
GRANTED PATENT FOR INVENTION | The manufacture device of monocrystalline, for the manufacture device crucible and monocrystalline manufacture method | Apr 05, 2017 | |||
KR | B1 | KR101707349 | Aug 30, 2013 | Patent | Grant |
Type : Patent Sub-Type : Grant | |||||
PATENT SPECIFICATION | 단결정의 제조 장치, 그것에 이용되는 도가니 및 단결정의 제조 방법 | Feb 15, 2017 | |||
JP | B2 | JP6028033 | Aug 30, 2013 | Patent | Grant |
Type : Patent Sub-Type : Grant | |||||
PUBLISHED GRANTED PATENT (SECOND LEVEL) | 単結晶の製造装置、それに用いられる坩堝及び単結晶の製造方法 | Nov 16, 2016 | |||
WO | A1 | WO2014038166 | Aug 30, 2013 | Patent | Application |
Type : Patent Sub-Type : Application | |||||
INTERNATIONAL APPLICATION PUBLISHED WITH INTERNATIONAL SEARCH REPORT | 単結晶の製造装置、それに用いられる坩堝及び単結晶の製造方法 | Mar 13, 2014 |
- 15 United States
- 10 France
- 8 Japan
- 7 China
- 5 Korea
- 2 Other
Patent Owner(s)
Patent Owner | Address | |
---|---|---|
TOYOTA JIDOSHA KABUSHIKI KAISHA | TOYOTA-SHI | |
NIPPON STEEL & SUMITOMO METAL CORPORATION | 6-1 MARUNOUCHI 2-CHOME CHIYODA-KU TOKYO 1008071 ?1008071 |
International Classification(s)

- 2013 Application Filing Year
- C30B Class
- 437 Applications Filed
- 395 Patents Issued To-Date
- 90.39 % Issued To-Date
Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
---|---|---|---|
Daikoku, Hironori | Susono-shi, JP | 34 | 63 |
# of filed Patents : 34 Total Citations : 63 | |||
Kado, Motohisa | Gotenba-shi, JP | 22 | 37 |
# of filed Patents : 22 Total Citations : 37 | |||
Kamei, Kazuhito | Kitakyushu-shi, JP | 38 | 209 |
# of filed Patents : 38 Total Citations : 209 | |||
Kusunoki, Kazuhiko | Nishinomiya-shi, JP | 40 | 137 |
# of filed Patents : 40 Total Citations : 137 | |||
Moriguchi, Koji | Nishinomiya-shi, JP | 20 | 153 |
# of filed Patents : 20 Total Citations : 153 | |||
Okada, Nobuhiro | Kisarazu-shi, JP | 48 | 217 |
# of filed Patents : 48 Total Citations : 217 | |||
Sakamoto, Hidemitsu | Susono-shi, JP | 20 | 62 |
# of filed Patents : 20 Total Citations : 62 | |||
Yashiro, Nobuyoshi | Itami-shi, JP | 25 | 123 |
# of filed Patents : 25 Total Citations : 123 |
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Patent Citation Ranking
- 1 Citation Count
- C30B Class
- 18.41 % this patent is cited more than
- 10 Age
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- No Forward Cites to Display

Maintenance Fees
Fee | Large entity fee | small entity fee | micro entity fee | due date |
---|---|---|---|---|
11.5 Year Payment | $7400.00 | $3700.00 | $1850.00 | Feb 13, 2027 |
Fee | Large entity fee | small entity fee | micro entity fee |
---|---|---|---|
Surcharge - 11.5 year - Late payment within 6 months | $160.00 | $80.00 | $40.00 |
Surcharge after expiration - Late payment is unavoidable | $700.00 | $350.00 | $175.00 |
Surcharge after expiration - Late payment is unintentional | $1,640.00 | $820.00 | $410.00 |
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