Power Semiconductor Module
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United States of America Patent
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Issued Date -
Aug 6, 2015
app pub date -
Jan 29, 2015
filing date -
Jan 30, 2014
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
A power semiconductor module includes a heat sink; a circuit board connected to the heat sink via a bonding material and formed with a wiring on a front surface of an insulating substrate; a transistor device including a main electrode and a control electrode formed on one surface and a back surface electrode formed on the other surface, the back surface electrode being connected to the circuit board via a bonding material; a first conductive member bonded to the main electrode via a bonding material; and wire or ribbon-shaped connection terminals that electrically connect the first conductive member and the control electrode with another device or the circuit board, wherein the control electrode is disposed at a corner portion of the main electrode, and the first conductive member has a shape in which the first conductive member is cut out at a portion above the control electrode.
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