METHOD FOR PRODUCING POLYCRYSTALLINE SILICON
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United States of America Patent
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Issued Date -
Aug 6, 2015
app pub date -
Aug 5, 2013
filing date -
Aug 7, 2012
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Abandoned
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Abstract
A process for producing polycrystalline silicon, comprising: a silicon deposition step for producing silicon through a reaction between a chlorosilane compound and hydrogen; a conversion reaction step for removing hydrogen chloride contained in an exhaust gas discharged from the silicon deposition step by bringing the exhaust gas into contact with activated carbon; a separation step for separating hydrogen contained in the gas after the conversion reaction obtained from the conversion reaction step; and a recycling step for supplying hydrogen obtained from the separation step to the silicon deposition step, wherein at least one of the following conditions (1) and (2) is satisfied: (1) the gas after the conversion reaction obtained from the conversion reaction step is brought into contact with an adsorbent containing a Lewis acid compound before the separation step; and (2) hydrogen obtained from the separation step is brought into contact with an adsorbent containing a Lewis acid compound before it is supplied to the silicon deposition step.
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