METHOD FOR SEPARATING THRESHOLD VOLTAGE SHIFTS CAUSED BY TWO EFFECTS IN SOI DEVICE
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Aug 6, 2015
app pub date -
Jun 5, 2013
filing date -
May 2, 2013
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
The present invention discloses a method for separating SOI device threshold voltage shift under a DC HCl stress, which belongs to a semiconductor reliability test field. By means of this method, under the condition that stressing bias is applied simultaneously to a gate terminal and a drain terminal of the SOI PMOSFET, the influences of HCl effect and NBTI effect are separated on the threshold voltage shift under the DC HCl stress. Adopting the present invention helps to better understand degradation mechanisms from HCl effect under stress with VG=VD, so as to better build model for the device and more accurately predict the device lifetime.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully