Method of forming copper sulfide film for reducing copper oxidization and loss
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United States of America Patent
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May 10, 2016
Grant Date -
Jul 30, 2015
app pub date -
Jan 24, 2014
filing date -
Jan 24, 2014
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Abstract
Effects of copper oxide formation in semiconductor manufacture are mitigated by etching with sulfide plasmas. The plasmas form protective copper sulfide films on copper surfaces and prevent copper oxide formation. When copper oxide formation does occur, the sulfide plasmas are able to transform the copper oxide into acceptable or more conductive copper compounds. Non-oxide copper compounds are removed using clear wet strips.
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