FILM FORMING APPARATUS, METHOD OF FORMING LOW-PERMITTIVITY FILM, SiCO FILM, AND DAMASCENE INTERCONNECT STRUCTURE
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United States of America Patent
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Issued Date -
Jul 30, 2015
app pub date -
Jun 18, 2013
filing date -
Aug 23, 2012
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Abstract
In a film forming apparatus according to an embodiment, a processing container defines a space including a plasma generation chamber and a processing chamber disposed under the plasma generation chamber. A first gas supply system supplies noble gas to the plasma generation chamber. The plasma generation chamber is sealed by a dielectric window. An antenna supplies a microwave to the plasma generation chamber via the dielectric window. A second gas supply system supplies a precursor gas to the processing chamber. A shield portion is disposed between the plasma generation chamber and the processing chamber. The shield portion includes a plurality of openings providing communication between the plasma generation chamber and the processing chamber, and has ultraviolet ray shielding property. In this film forming apparatus, the pressure in the plasma generation chamber is set greater than the pressure in the processing chamber by a factor of 4 or more.
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