SPUTTERING TARGET AND PRODUCING METHOD THEREOF
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United States of America Patent
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Jul 30, 2015
app pub date -
Aug 8, 2013
filing date -
Aug 10, 2012
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The sputtering target has a component composition containing Ga: 2 to 30 at %, In: 15 to 45 at %, Na: 0.05 to 15 at % as metal components other than F, S and Se in the sputtering target and the remainder composed of Cu and inevitable impurities. The sputtering target has a composition in which a Na compound phase is dispersed, the Na is contained in the Na compound phase, a theoretical density ratio of the sintered body is 90% or more, a deflective strength is 60 N/mm2 or more, a bulk resistivity is 0.1 Ω*cm or less, and the number of Na compound aggregates having a size of 0.05 mm2 or more contained in an area of 1 cm2 of a surface of the sputtering target is one or less on average.
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