METHOD OF MODIFYING POLYSILICON LAYER THROUGH NITROGEN INCORPORATION FOR ISOLATION STRUCTURE
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United States of America Patent
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Jul 23, 2015
app pub date -
Jan 17, 2014
filing date -
Jan 17, 2014
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The present disclosure relates to a method of modifying a polysilicon layer, which includes the following steps. A polysilicon layer is provided. Nitrogen is incorporated into the polysilicon layer toward a predetermined depth. The polysilicon layer incorporated with nitrogen is etched, wherein after the nitrogenized polysilicon is removed, the formation of the remaining polysilicon layer is nearly indistinguishable from the formation of the polysilicon layer.
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