Mechanical Compression-Based Method for the Reduction of Defects in Semiconductors
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United States of America Patent
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Issued Date -
Jul 23, 2015
app pub date -
Jan 12, 2015
filing date -
Jan 17, 2014
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Abandoned
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Abstract
A high pressure-directed engineering method enables reduced defect semiconductor materials that are unattainable by other chemical and physical methods. Experimental results show that hydraulic pressures as low as 0.5 GPa can eliminate stacking faults and significantly reduce point defects, leading to improved materials quality in semiconductors, such as GaN.
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