CHEMICAL MECHANICAL POLISHING CONDITIONER WITH OPTIMAL ABRASIVE EXPOSING RATE
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United States of America Patent
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Issued Date -
Jul 23, 2015
app pub date -
Nov 12, 2014
filing date -
Jan 21, 2014
priority date (Note) -
Abandoned
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Abstract
The present invention relates to a chemical mechanical polishing conditioner with optimal abrasive exposing rate, comprising a substrate; a bonding layer disposed on the substrate; and a plurality of abrasive particles placed on the bonding layer, and the abrasive particles are placed on the substrate by the bonding layer; wherein each abrasive particle has an abrasive exposing rate which is ¼ to ¾ of particle sizes of the abrasive particles and is measured by a height measuring device. Therefore, the chemical mechanical polishing conditioner with optimal abrasive exposing rate of the present invention can control the exposing rate of the abrasive particles to improve the cut rate of the conditioner.
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