PLASMA ETCHING APPARATUS
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Mar 27, 2015
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Sep 29, 2009
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Abstract
A method for etching a substrate with plasma, including: holding a substrate on a substrate stage; forming an annular zero magnetic field region lying along a circumferential direction of an inner side of a middle-stage coil of three stages of concentrically-arranged magnetic field coils; supplying-etching gas to an interior of a chamber main body; supplying high frequency power to a high-frequency antenna and an electrode to form an induced electric field in the zero magnetic field region to generate plasma; and etching the substrate with the plasma. Forming an annular zero magnetic field region includes forming the region in a state in which the chamber main body is internally inserted from an inner side of a lowermost stage coil of the magnetic field coils to the inner side of the middle-stage coil so that the zero magnetic field region is formed near an inner surface of the top part.
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