SYSTEMS AND METHODS FOR MONOLITHICALLY ISLED SOLAR PHOTOVOLTAIC CELLS

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United States of America Patent

APP PUB NO 20150194547A1
SERIAL NO

14666303

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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The method for forming a monolithically isled solar cell comprises forming a first metal layer having base and emitter metallization on a passivated backside of a semiconductor substrate. An insulating support backplane is attached to a surface of the first metal layer and at least a portion of the semiconductor substrate passivated backside. Trenches are formed through the semiconductor substrate to the insulating support backplane in a trench isolation pattern partitioning the semiconductor substrate into a plurality of monolithically isled semiconductor regions. Vias are formed in the insulating support backplane to portions of the first metal layer base and emitter metallization. A second metal layer having base and emitter metallization is formed on the insulating support backplane. The second metal layer is electrically connected to portions of the first metal layer base and emitter metallization through the vias.

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Patent Owner(s)

Patent OwnerAddress
OB REALTY LLC19900 MACARTHUR BLVD 12TH FLOOR IRVINE CA 92647

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Moslehi, Mehrdad M Los Altos, US 307 13906

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