MEMORY DEVICE AND METHODS OF FORMING MEMORY DEVICE AND SEMICONDUCTOR DEVICE
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United States of America Patent
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Issued Date -
Jul 9, 2015
app pub date -
Jul 29, 2014
filing date -
Jan 8, 2014
priority date (Note) -
Abandoned
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Abstract
A method of forming a memory device is provided. A first conductive layer is formed on a substrate. The first conductive layer is patterned to form at least two trenches extending along a first direction therein. An insulating layer is formed on surfaces of the trenches and on a surface of the first conductive layer. A second conductive layer is formed on the insulating layer. The second conductive layer is patterned to form at least one control gate extending along a second direction different from the first direction. The first conductive layer is patterned to form at least one floating gate below the control gate and to form a select gate adjacent to the control gate.
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