Resistive memory device capable of improving sensing margin of data

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United States of America Patent

PATENT NO 9324382
APP PUB NO 20150194200A1
SERIAL NO

14510629

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Abstract

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A resistive memory device includes a cell block having a plurality of unit memory cells in which a resistive element and a cell select element are connected to each other in series, the cell block operating in response to a word line, a bit line, and a source line, and a dummy line, when different interconnection layers form the source line and the bit line, respectively, connected to one of the interconnection layers which is formed at a lower side the remaining interconnection layer between the interconnection layers for the source line and the bit line, wherein the dummy line has a resistance lower than a resistance of the lower interconnection layer.

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Patent Owner(s)

Patent OwnerAddress
SAMSUNG ELECTRONICS CO LTDSUWON-CITY KYUNGKI-DO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lee, Jae-kyu Yongin-si, KR 49 325
Suh, Ki-Seok Hwaseong-si, KR 12 140

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