III NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
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United States of America Patent
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Issued Date -
Jul 2, 2015
app pub date -
Jul 4, 2012
filing date -
Jul 4, 2012
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Abstract
Provided is a III nitride semiconductor device higher heat dissipation performance, and a method of manufacturing a III nitride semiconductor device which makes it possible to fabricate such a III nitride semiconductor device at higher yield. In a method of a III nitride semiconductor device, a semiconductor structure obtained by sequentially stacking an n-layer, an active layer, and a p-layer is formed on a growth substrate; a support body including a first support electrically connected to an n-layer to serve as an n-side electrode, a second support electrically connected to a p-layer to serve as a p-side electrode, and structures made of an insulator for insulation between first and second supports is formed on the p-layer side of the semiconductor structure; and the growth substrate is separated using a lift-off process. The first support and the second support are grown by plating.
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