SEMICONDUCTOR EPITAXIAL STRUCTURES AND SEMICONDUCTOR OPTOELECTRONIC DEVICES COMPRISING THE SAME
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app pub date -
Feb 26, 2015
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May 12, 2010
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Abstract
An optoelectronic device comprises a substrate; a converting structure for converting energy between light and electric current over the substrate; and a semiconductor buffer layer combination between the substrate and the converting structure, the semiconductor buffer layer combination comprising multiple first semiconductor layers and multiple second semiconductor layers alternately stacked, wherein each of the multiple first semiconductor layers comprises a first element, each of the multiple second semiconductor layers comprises a second element different from the first element, and the composition ratio of the first element gradually increases or decreases with an increase of the distance between the first semiconductor layers and the substrate.
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