Methods for Forming Crystalline IGZO Through Power Supply Mode Optimization
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United States of America Patent
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Issued Date -
Jun 25, 2015
app pub date -
Dec 23, 2013
filing date -
Dec 23, 2013
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Abstract
Embodiments described herein provide method for forming crystalline indium-gallium-zinc oxide (IGZO). A substrate is positioned relative to at least one target. The at least one target includes indium, gallium, zinc, or a combination thereof. A substantially constant voltage is provided across the substrate and the at least one target to cause a plasma species to impact the at least one target. The impacting of the plasma species on the at least one target causes material to be ejected from the at least one target to form an IGZO layer above the substrate.
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