METHOD FOR TREATING SURFACE OF SEMICONDUCTOR LAYER, SEMICONDUCTOR SUBSTRATE, METHOD FOR MAKING EPITAXIAL SUBSTRATE

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United States of America Patent

SERIAL NO

14577847

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Abstract

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A surface treatment method for a semiconductor layer includes growing a first layer on a substrate in a growth reactor, the first layer consisting of one of gallium nitride, aluminum gallium nitride and indium aluminium nitride; growing a second layer of gallium nitride on a surface of the first layer, the gallium nitride of the second GaN layer having a composition ratio of gallium to nitrogen larger than 2; taking the substrate out of the growth reactor after growing the second layer; and removing the second layer after taking the substrate out of the growth reactor.

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Patent Owner(s)

Patent OwnerAddress
SUMITOMO ELECTRIC DEVICE INNOVATIONS INC1 KANAI-CHO SAKAE-KU YOKOHAMA-SHI KANAGAWA 244-0845

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
WATANABE, Tadashi Yokohama-shi, JP 124 1031

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