Method for Producing Polysilicon
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United States of America Patent
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Issued Date -
Jun 25, 2015
app pub date -
Jul 1, 2013
filing date -
Jul 9, 2012
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Abandoned
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Abstract
A method for producing polysilicon includes a deposition step for depositing polysilicon from raw material gas including chlorosilanes, and a heat recovery step of supplying exhaust gas generated from the deposition step in a boiler type heat recovery device provided with an exhaust gas pipe and then recovering heat. A gas temperature at an exhaust gas pipe outlet of the boiler type heat recovery device is set to 200° C. or more, and an exhaust gas flow rate at the exhaust gas pipe outlet in the boiler type heat recovery device is adjusted to 10 m/second or higher.
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