CMOS FABRICATION OF A THIN-FILM BULK ACOUSTIC RESONATOR
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United States of America Patent
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Jun 18, 2015
app pub date -
Jul 15, 2013
filing date -
Jul 16, 2012
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Abstract
A process of forming a thin-film bulk acoustic resonator (FBAR) device (130, 914) on a silicon-on-thin film aluminum-nitride on silicon (SOFTANOS) substrate (110) using a CMOS fabrication process is provided. The SOFTANOS substrate, which is an example of a high thermal conductivity silicon-on-insulator (SOI) substrate, comprises an aluminum nitride (AlN) layer (114) and a silicon layer (118). The AlN layer has low electrical conductivity, high thermal conductivity, and good piezoelectric properties. A CMOS device (140, 910) is formed in the silicon layer, and the FBAR device is formed in the AlN layer.
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