RESISTANCE CHANGE MEMORY ELEMENT
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United States of America Patent
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Issued Date -
Jun 18, 2015
app pub date -
Aug 11, 2013
filing date -
Aug 31, 2012
priority date (Note) -
Abandoned
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Abstract
Provided is a resistive-switching memory device that includes: a resistive-switching insulating film; a source electrode arranged on a first main surface of the resistive-switching insulating film; a drain electrode arranged on the first main surface; and a gate electrode arranged on a second main surface of the resistive-switching insulating film, the second main surface being opposite to the first main surface.
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