SEMICONDUCTOR DEVICE MANUFACTURING METHOD
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United States of America Patent
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Issued Date -
Jun 18, 2015
app pub date -
Jul 31, 2012
filing date -
Jul 11, 2012
priority date (Note) -
Abandoned
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Abstract
The present application discloses a method for manufacturing a semiconductor device, comprising: forming a gate stack structure and gate sidewall spacers on the substrate, and forming a source region and a drain region on the substrate on opposite sides of the gate stack structure and the gate sidewall spacers, respectively; selectively forming a block layer in the drain region, wherein the block layer covers the drain region and exposes the source region; epitaxially forming an raised source region in the exposed source region; removing the block layer. According to the semiconductor device manufacturing method in the present disclosure, by selectively forming an raised source region in the source region side to form an asymmetric device structure, the parasitic resistance on the source region side and the parasitic capacitance on the drain region side are pertinently reduced and the device performance is effectively improved.
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