MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
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United States of America Patent
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Jun 18, 2015
app pub date -
Dec 12, 2014
filing date -
Dec 17, 2013
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Abstract
The manufacturing method for a semiconductor device includes a step of forming an STI insulator higher than a surface of a semiconductor layer of a semiconductor substrate, and a step of implanting impurity ions from both oblique directions which are substantially perpendicular to a direction of a channel length of an FET which is isolated from other FETs by the STI and are inclined to each of one side and the other side from a normal direction of the surface of the semiconductor substrate. It is possible to adjust the impurity dose implanted into an inner side of a channel which is away from a sidewall of the STI and outer sides of channel which are formed along the vicinity of the sidewall, and to suppress the occurrence of the kink characteristics of the FET.
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